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| MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features * Pb-Free Packages are Available * Collector -Emitter Sustaining Voltage - * * * * * VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS C 2,4 B1 E3 Schematic MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 AWW 9435 9435 A WW = Specific Device Code = Assembly Location = Work Week PIN ASSIGNMENT 4 C B 1 C 2 E 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 September, 2004 - Rev. 5 Publication Order Number: MMJT9435/D MMJT9435 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol VCEO VCB VEB IB Value 30 45 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 6.0 1.0 3.0 5.0 Base Current - Continuous Collector Current - Continuous Collector Current - Peak IC Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 3.0 24 1.56 0.72 W mW/C W C TJ, Tstg - 55 to + 150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA RqJA TL Max 42 80 174 Unit Thermal Resistance, Junction-to-Case - Junction-to-Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material - Junction-to-Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds C/W 260 C ORDERING INFORMATION Device MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G Package SOT-223 SOT-223 (Pb-Free) SOT-223 SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel 4000 / Tape & Reel 4000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I I I I I III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. fT = |hFE| * ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125C) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) 0.75 0.25 0.50 1.0 0 1.0 0.25 A 0.5 A Figure 1. Collector Saturation Region 0.8 A 1.2 A IB, BASE CURRENT (mA) 10 Characteristic IC = 3.0 A 100 http://onsemi.com MMJT9435 1000 3 0.05 0.25 0.10 0.15 0.20 0 1.0 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) Figure 2. Collector Saturation Region VEBO IEBO ICER Cob hFE Cib fT IB, BASE CURRENT (mA) 10 IC = 0.25 A Min 125 110 90 6.0 30 - - - - - - - - - - - 0.155 - - Typ 135 100 220 - - 110 - - - - - - - 0.5 A 100 0.8 A 0.210 0.275 0.550 1.10 1.25 Max 1.2 A 20 200 150 10 - - - - - - - - mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF 1000 MMJT9435 1000 1000 150C HFE, DC CURRENT GAIN 150C HFE, DC CURRENT GAIN 25C 100 - 55C 25C 100 - 55C VCE = 1.0 V 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 VCE = 4.0 V 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 3. DC Current Gain Figure 4. DC Current Gain 10 IC/IB = 10 1.0 VBE(sat) V, VOLTAGE (V) VBE(sat) V, VOLTAGE (V) 1.0 0.1 VCE(sat) 0.1 VCE(sat) IC/IB = 50 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 5. "On" Voltages Figure 6. "On" Voltages 1.2 1000 V, VOLTAGE (V) 0.8 25C 150C 0.4 CAPACITANCE (pF) - 55C 100 Cob VCE = 4.0 V 0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. VBE(on) Voltage Figure 8. Output Capacitance http://onsemi.com 4 MMJT9435 f t , CURRENT-GAIN BANDWIDTH PRODUCT 1000 IC , COLLECTOR CURRENT (AMPS) VCE = 10 V ftest = 1.0 MHz TA = 25C 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 100 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.001 0.1 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Current-Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 4.0 PD , POWER DISSIPATION (WATTS) 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C) There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 11. Power Derating 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 RqJA(t) = r(t) qJA qJA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) qJA(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 0.01 0.1 t, TIME (seconds) 1.0 10 Figure 12. Thermal Response http://onsemi.com 5 MMJT9435 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 4 S 1 2 3 B D L G J C 0.08 (0003) H M K SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMJT9435/D |
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